2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics. 2N designed for generalpurpose switching and amplifier applications. DC Current Gain hFE = 4 Adc CollectorEmitter Saturation Voltage VCE(sat) = 2N Datasheet PDF Download – SILICON PNP TRANSISTOR, 2N data sheet.
|Published (Last):||21 January 2012|
|PDF File Size:||11.96 Mb|
|ePub File Size:||17.65 Mb|
|Price:||Free* [*Free Regsitration Required]|
An MJ PNPwhich is also manufactured using the epitaxial process today, is a complementary transistor to the 2N It is by now unlikely to actually obtain a genuine 2N transistor when using popular sales platforms such as Amazon or Ebay; classic electronics distributors are mostly dataeheet able to properly source them. Nevertheless, a 2N and many other power transistors originating from this era cannot be assumed to have great high-frequency performance and there can be degradation of phase-shift and open-loop gain even within the audio frequency range.
The team of datashert, production, and applications engineers 22955 RCA Electronic Components achievement awards in From Wikipedia, the free encyclopedia. Views Read Edit View history. It was second sourced by other manufacturers; Texas Instruments listed a single-diffused mesa version of the device in an Adtasheet datasheet.
Sometimes the V CBO breakdown voltage the maximum voltage between collector and base, with the emitter open, an unrealistic arrangement in practical circuits is given as the only voltage rating, which can cause confusion. Build your own low-power transmitters: It was produced exclusively by the Czechoslovakian electronics company Tesla.
Since the early s, the 2N transistor has been heavily targeted by counterfeiters, who substitute much smaller silicon dies with lesser power ratings, use inferior mounting techniques, and fake the markings.
2Nfamilien – Wikipedia, den frie encyklopædi
Other manufacturers around this time also would specify similar values e. The exact performance characteristics depend on the manufacturer and date; before the move to the epitaxial base version in the mids the f T could be as low as 0. The frequency at which gain begins to drop off may be much lower, see below. It has a transition frequency of 2. It was introduced in the early s by RCA using a hometaxial power transistor process, transitioned to an epitaxial dwtasheet in the mids. KD are packaged in a TO-3 case style called T41 by Teslait is a 20 amp80 voltwatt power transistor.
Wikimedia Commons has media related 2m2955 2N In other projects Wikimedia Commons. With an “infinite” heatsink, that is: The robot builder’s bonanza 2nd ed. The art of electronics 2nd ed. Graf; William Sheets The 2N, 2N, and 2N devices, for example, which date back to the s but have been improved, are still useful in new designs and are still popular for experimenters.
2N2955 Datasheet PDF
RCA by had changed their specification to give 2. Commons category link from Wikidata. With changes to semiconductor manufacturing technology, the original process became economically uncompetitive in the mids, and a similar device was datashet using epitaxial base technology.
Retrieved 31 October The total power dissipation written P D in most American datasheets, P tot in European ones depends on the heatsink to which the 2N is connected.
DATASHEET 2N5884G – on Semiconductor Transistor PNP To-3
This page was last edited on 22 Novemberat The 2N is a silicon NPN power transistor intended for general purpose applications. The KD have higher power and higher current than 2N Although the original 2N went into decline relative to epitaxial-base transistors because of high manufacturing costs, the epitaxial-base version continued to be used in both linear amplifiers and switching supplies.
The 2N remains very popular as a series pass transistor in linear power supplies and is still used in for medium- current and high- power circuits generally, including low frequency power converters although its use in audio power amplifiers and DC-to-AC inverters is now less common and its use in higher frequency switch-mode applications never was very practical. In the sixties and early seventies, Philips produced similar devices encapsulated in TO-3 packages under the reference BDY20 described datashee being for “hifi” purposes and BDY38 although the BDY38 has lower voltage ratings than the 2N The device is designed to operate with an efficient heatsink, but care must be taken to mount the device properly,    else physical damage or worsened power handling may result, especially with cases or heatsinks that are not perfectly flat.
KD is a higher power equivalent used in Eastern Bloc countries, and is intended for general purpose applications. Modern successors to the 2N can be much more suitable in fast-switching circuits or high-end audio power amplifiers. Retrieved 7 November Retrieved from ” https: The maximum collector-to-emitter voltage for the 2N, like other transistors, depends on the resistance path the external circuit provides between the base and emitter of the transistor; with ohms a 70 volt breakdown rating, V CER datazheet, and the Collector-Emitter Sustaining voltage, V CEO susis given by ON Semiconductor.
The 2Nwith a TO-3 case has slightly lower gain but significantly higher maximum ratings W, Vceo, 16 Amps. The 2N is a much lower power version of the 2N, rated at 25 W55 V and 4 Abut became almost obsolete about the late s when many TO devices were withdrawn from mainstream manufacturers’s lists. Modern 2N datasheets often, but not always, specify f T of 2. The historically-significant 2N was designed by Herb Meisel’s engineering group with RCA; it was the first multi-amp silicon power transistor 2n29955 sell for less than one dollar, and became an industry workhorse standard.